IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Dimension D and E do not include mold flash.
It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Please note that some Vishay documentation may still make reference to the IEC definition. B, Mar This datasheet is subject to change without notice.
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Mold flash shall not exceed 0. Such statements are not binding statements about the suitability of products for a particular application.
Xian and Mingxin actually photo. Contour of slot optional.
IRFP440 MOSFET. Datasheet pdf. Equivalent
Thermal pad contour optional with dimensions D1 and E1. Drain Current Current regulator Same type as D. Repetitive rating; pulse width limited by maximum junction temperature see fig. These dimensions are measured at the outermost extremes of the plastic body.
Products may be manufactured at one of several qualified locations. Lead finish uncontrolled in L1.
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