MJE / MJE NPN Silicon Power Transistors. These devices are designed for high-voltage, high-speed power switching inductive circuits where. Characteristics of the MJE bipolar transistor. Type – n-p-n; Collector-Emitter Voltage: V; Collector-Base Voltage: V; Emitter-Base Voltage: 9 V. Taiwan Semiconductor Bipolar Transistors – BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Taiwan.

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We 133002 own stock and we can also support our customers with long lead time buffer orders. A wide variety of transistor options are available to you, such as bipolar junction transistor, triode transistor, and logic ics. Looking for Asia Logistic Centre, can help customer save shipping cost with on time delivery!

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Transistor 13002

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